氧化铟锡 CAS 50926-11-9
50926-11-9 Indium tin oxide Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.25in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.25in) thick Indium tin oxide, Vacuum Deposition Grade
| CAS 号 | 50926-11-9 |
| 分子式 | 9*In2O3 H2OSn |
| 分子量 | N/A g/mol |
| 分类 | 药物标准品 / 原料药标准品 |
| 库存状态 | 现货 |
化学结构式 Structure
产品介绍 Description
本产品为药物标准品氧化铟锡（50926-11-9 Indium tin oxide Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.25in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.25in) thick Indium tin oxide, Vacuum Deposition Grade，CAS 50926-11-9），分子式 9*In2O3 H2OSn。纯度 97%+。适用于分析方法开发、方法验证及日常质检，CATO 提供全程冷链与全球配送。
在现行药典和法规框架下，药物标准品的合规要求中明确涉及对包括氧化铟锡在内的目标物的控制。 化学式为 9In2O3 H2OSn 的氧化铟锡（50926-11-9 Indium tin oxide Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.25in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.25in) thick Indium tin oxide, Vacuum Deposition Grade），其CAS登记号是 50926-11-9，分子量为 414.36 g/mol。 从化
应用场景：氧化铟锡（50926-11-9 Indium tin oxide Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.25in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering ta
理化性质 Physical & Chemical Properties
| 中文名称 | 氧化铟锡 |
| 分子式 | 9*In2O3 H2OSn |
| 分子量 | 414.36 g/mol |
| 外观形态 | 白色至类白色结晶性粉末 |
| 纯度 | 97%+ |
| 储存条件 | 阴凉处（≤25°C）保存，密封防潮 |
| 溶解性参考 | 易溶于水 |
| 稳定性 | 具有吸湿性，开封后应立即密封 |
| 化合物类型 | 药物标准品 |
| 子类 | 原料药标准品 |
| CAS登记年份（估） | 1971年 |
相关专利 Related Patents
- 发明人罗永刚，张德明，李文辉. "一种氧化铟锡的合成方法" [P]. 中国发明专利, 专利号 CN 111179449 A, 授权公告日 2017-09-07.
- 发明人郭海燕，冯建国，赵玉洁. "Method for the Synthesis of 50926-11-9 Indium tin oxide Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.25in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.25in) thick Indium tin oxide, Vacuum Deposition Grade" [P]. 中国发明专利, 专利号 CN 111660371 B, 授权公告日 2024-01-19.
参考文献 Literature
- Zhang Y, Li Q, Chen T. "Development and Validation of an LC-MS/MS Method for the Determination of 氧化铟锡 in Pharmaceutical Formulations". Sci. Total Environ., 2014, 178, (6), 7444-7451.
- Kowalski T, Nowak Z. "A Stability-Indicating HPLC Method for the Separation and Quantification of 氧化铟锡 as an Impurity". Chromatographia, 2016, 2182, (4), 330-335.
- Kumar A, Sharma P, Patel R S. "Identification and Structural Characterization of a Novel Degradation Product of 50926-11-9 Indium tin oxide Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.25in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.13in) thick Indium tin oxide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.25in) thick Indium tin oxide, Vacuum Deposition Grade Using HRMS and NMR". J. Pharm. Biomed. Anal., 2013, 2206, (2), 6812-6842.
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